Geometrical factors in SEE rate calculationsPETERSEN, E. L; PICKEL, J. C; SMITH, E. C et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1888-1909, issn 0018-9499Conference Paper

Monitoring SEU parameters at reduced biasROTH, D. R; MCNULTY, P. J; ABDEL-KADER, W. G et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1721-1724, issn 0018-9499Conference Paper

A practical system hardness assurance programHENDERSON, L; SIMPKINS, L; NAMENSON, A et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1725-1734, issn 0018-9499Conference Paper

Differential charging control on solar arrays for geosynchronous spacecraftBOGORAD, A; BOWMAN, C; HERSCHITZ, R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1542-1546, issn 0018-9499Conference Paper

MeV electron populations as measured on DMSPMULLEN, E. G; GUSSENHOVEN, M. S.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1479-1483, issn 0018-9499Conference Paper

Paramagnetic defect centers in BESOI and SIMOX buried oxidesWARREN, W. L; SHANEYFELT, M. R; SCHWANK, J. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1755-1764, issn 0018-9499Conference Paper

Risetime sharpening using magnetic insulation in the aurora diodeMILLER, R. B; MCCULLOUGH, W. F; MERKEL, G et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1426-1433, issn 0018-9499Conference Paper

Low temperature proton irradiation of GaAs MESFETsSHAW, G. J; XAPSOS, M. A; WEAVER, B. D et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1300-1306, issn 0018-9499Conference Paper

Numerical analysis of single event burnout of power MOSFETsKUBOYAMA, S; MATSUDA, S; NAKAJIMA, M et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1872-1879, issn 0018-9499Conference Paper

On-chip p-MOSFET dosimetryBUEHLER, M. G; BLAES, B. R; SOLI, G. A et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1442-1449, issn 0018-9499Conference Paper

Radiation response of silicon on diamond (SOD) devicesANNAMALAI, N. K; SAWYER, J; PRAMOD KARULKAR et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1780-1786, issn 0018-9499Conference Paper

Relationship between IBICC imaging and SEU in CMOS ICsSEXTON, F. W; HORN, K. M; DOYLE, B. L et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1787-1794, issn 0018-9499Conference Paper

Design considerations for a radiation hardened nonvolatile memoryMURRAY, J. R.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1610-1618, issn 0018-9499Conference Paper

Hardness-assurance and testing issues for bipolar/BiCMOS devicesNOWLIN, R. N; FLEETWOOD, D. M; SCHRIMPF, R. D et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1686-1693, issn 0018-9499Conference Paper

Observation of single event upsets in analog microcircuitsKOGA, R; PINKERTON, S. D; MOSS, S. C et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1838-1844, issn 0018-9499Conference Paper

The shape of heavy ion upset cross section curvesXAPSOS, M. A; WEATHERFORD, T. R; SHAPIRO, P et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1812-1819, issn 0018-9499Conference Paper

Altitude and latitude variations in avionics SEU and atmospheric neutron fluxNORMAND, E; BAKER, T. J.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1484-1490, issn 0018-9499Conference Paper

Converting a bulk radiation-hardened BiCMOS technology into a dielectrically-isolated processDELAUS, M; EMILY, D; MAPPES, B et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1774-1779, issn 0018-9499Conference Paper

Determination of funnel length from cross section versus LET measurementsGOLKE, K. W.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1910-1917, issn 0018-9499Conference Paper

Radiation-induced charge effects in buried oxides with different processing treatmentsPENNISE, C. A; BOESCH, H. E; GOETZ, G et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1765-1773, issn 0018-9499Conference Paper

Results from the high efficiency solar panel experiment flown on CRRESRAY, K. P; MULLEN, E. G; TRUMBLE, T. M et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1505-1511, issn 0018-9499Conference Paper

Singel-word multiple-bit upsets in static random access devicesKOGA, R; PINKERTON, S. D; LIE, T. J et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1941-1946, issn 0018-9499Conference Paper

Single event induced charge transport modeling of GaAs MESFETsWEATHERFORD, T. R; MCMORROW, D; CURTICE, W. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1867-1871, issn 0018-9499Conference Paper

The low earth orbit radiation environment & its evolution from measurements using the CREAM & CREDO experimentsDYER, C. S; SIMS, A. J; TRUSCOTT, P. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1471-1478, issn 0018-9499Conference Paper

A conceptual model of single-event gate-rupture in power MOSFET'sBREWS, J. R; ALLENSPACH, M; SCHRIMPF, R. D et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1959-1966, issn 0018-9499Conference Paper